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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2331 DESCRIPTION *With TO-3PFa package *High voltage;high speed *Built-in damper diode APPLICATIONS *For color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base VALUE 1500 600 5 3.5 1 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IE=200mA , IC=0 IC=3A; IB=0.8A IC=3A ;IB=0.8A VCB=800V IE=0 IC=0.5A ; VCE=5V IC=0.1A ; VCE=10V IF=3.5A 8 MIN 5 2SD2331 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE fT VF TYP. MAX UNIT V 3.0 5.0 1.5 10 V V A 3 2.0 MHz V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2331 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
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